Negative Bias Temperature Instability (NBTI) in SiO2 and SiON gate dielectrics understood through disorder-controlled kinetics

被引：35
|
作者：
Kaczer, B
Arkhipov, V
Jurczak, M
Groeseneken, G
机构：
[1] IMEC, B-3001 Louvain, Belgium
[2] Katholieke Univ Leuven, ESAT Dept, Louvain, Belgium
来源：
MICROELECTRONIC ENGINEERING | 2005年 / 80卷
关键词：
silicon dioxide; silicon oxynitride; negative bias temperature instability; dispersive transport; hydrogen;
D O I：
10.1016/j.mee.2005.04.054
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The acceleration of Negative Bias Temperature Instability (NBTI) in oxynitride gate dielectrics is explained within the framework of disorder-controlled hydrogen kinetics. Nitrogen is assumed to introduce deeper localized hydrogen states in gate oxide film, thus increasing the dispersion of hydrogen transport. The dispersion parameter is linked with the temperature-dependent NBTI power-law exponent, while hydrogen hopping frequency is inferred from the temperature dependence of NBTI power-law prefactor. NBTI exponents up to 0.5 are explained by transport of charged hydrogen.
引用
收藏
页码：122 / 125
页数：4
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