InGaN Metal-Semiconductor-Metal Photodetectors With Aluminum Nitride Cap Layers

被引：8

作者：

Lee, Kai-Hsuan ^{[1
]}

Chang, Ping-Chuan ^{[2
]}

Chang, Shoou-Jinn ^{[3
,4
]}

Wu, San-Lein ^{[5
]}

机构：

[1] Natl Synchrotron Radiat Res Ctr, Nano Sci Grp, Sci Res Div, Hsinchu 30076, Taiwan

[2] Kun Shan Univ, Dept Electroopt Engn, Tainan 71003, Taiwan

[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Inst Microelect, Tainan 70101, Taiwan

[4] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Dept Elect Engn, Tainan 70101, Taiwan

[5] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 83347, Taiwan

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2011年 / 47卷 / 08期

关键词：

Aluminum nitride; InGaN; photodetectors; EFFECTIVE-MASS; GAN; MECHANISM; SEGREGATION; PHOTODIODES; NOISE;

D O I：

10.1109/JQE.2011.2158389

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the fabrication and characterization of InGaN metal-semiconductor-metal photodetectors (PDs) by using triethylgallium gallium source for the growth of InGaN active layers and in-situ aluminum nitride as cap layers. Improved characteristics such as reduced dark leakage current, large ultra violet (UV)-to-visible rejection ratio, low noise level, and high detectivity can be achieved in our devices. Current transport mechanisms in InGaN PDs were also investigated. Fowler-Nordheim mechanism associated with the defect-related tunneling should be included besides the traditional thermionic emission model.

引用

页码：1107 / 1112

页数：6

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