Design of CMOS based Class-A Power Amplifier for C-Band Applications

被引：0
|
作者：
Gupta, Priti [1 ]
Pradhan, Nigidita [1 ]
Jana, Sanjay Kumar [1 ]
机构：
[1] Natl Inst Technol, Dept ECE, Sikkim, India
来源：
2018 INTERNATIONAL SYMPOSIUM ON DEVICES, CIRCUITS AND SYSTEMS (ISDCS) | 2018年
关键词：
CMOS; optimum load impedance; Class-A power amplifier; Transformer based Matching Network (TMN); 180nm technology;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This work presents the design of 8 GHZ CMOS based Class-A Power Amplifier (PA) with synthesized Transformer Matching Network (TMNs). The circuit is implemented in 180nm process technology using semiconductor laboratory Process Design KIT(SCL PDKs). Transformer based Matching Network is used to provide matching at the output side of the C-Band similar to 8GHz class-A power amplifier. The optimized simulated results shows that power added efficiency is 22.74 %, power gain is 32.77 dBm, total harmonic distortion (THD) is 11.40 %, Compression Point 1.77 dBmand IPN Curves2.016 dBm. This optimized results can be used in transreceiver for High speed communication systems.
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页数：4
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