Efficiency Droop Reduction in InGaN/GaN Light-emitting Diodes by Graded-thickness Multiple Quantum Wells

被引：0

作者：

Wang, C. H. ^{[1
,2
]}

Chang, W. T. ^{[1
,2
]}

Chang, S. P. ^{[1
,2
]}

Li, J. C. ^{[1
,2
]}

Kuo, H. C. ^{[1
,2
]}

Lu, T. C. ^{[1
,2
]}

Wang, S. C. ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, 1001 Ta Hsueh Rd, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

来源：

2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2011年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaN/GaN LED with graded-thickness MQWs has superior hole and radiative recombination distribution by simulation modeling, and electroluminescence spectrum reveals additional emission from the narrower wells. Output power and efficiency droop behavior are both improved. (C) 2010 Optical Society of America

引用

页数：2

共 6 条

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