Parallel memristive filaments model applicable to bipolar and filamentary resistive switching

被引：22

作者：

Liu, Xinjun ^{[1
]}

Biju, Kuyyadi P. ^{[2
]}

Lee, Joonmyoung ^{[1
]}

Park, Jubong ^{[1
]}

Kim, Seonghyun ^{[1
]}

Park, Sangsu ^{[2
]}

Shin, Jungho ^{[1
]}

Sadaf, Sharif Md. ^{[1
]}

Hwang, Hyunsang ^{[1
,2
]}

机构：

[1] Gwangju Inst Sci & Technol GIST, Sch Mat Sci & Engn, Kwangju 500712, South Korea

[2] Gwangju Inst Sci & Technol GIST, Dept Nanobio Mat & Elect WCU, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

TRANSITION-METAL OXIDES; MEMORY; MECHANISM; ELEMENT; RRAM;

D O I：

10.1063/1.3638486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The concept of memristive filaments (MFs) is introduced, which is based on the memristors developed by the Hewlett-Packard group. The effects of key parameters on electrical properties are elucidated. The current-voltage features of bipolar and filamentary resistive switching are reproduced by using a parallel MF model with dynamic growth and rupture of multiple MFs. This model can be extended and adapted to most nanosized transition metal oxide memristors. (C) 2011 American Institute of Physics. [doi:10.1063/1.3638486]

引用

页数：3

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