The influence of structure imperfection on the glass-transition behavior in C60 films

被引:0
作者
Wu, J
Gu, M [1 ]
Bao, P
Feng, D
Yang, SZ
机构
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
[3] Nanjing Univ, Dept Elect Sci & Engn, Nanjing 210093, Peoples R China
来源
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2005年 / 19卷 / 15-17期
关键词
fullerene; dielectric;
D O I
10.1142/S021797920503147X
中图分类号
O59 [应用物理学];
学科分类号
摘要
Two batches Of C-60 films were grown at different growth rate, using a vacuum deposition technique. X-ray diffraction patterns indicate both films have preferential (111) orientation. We measured their dielectric constant and loss factor from 80K to room temperature, and observed distinct broad and asymmetric loss peaks, attributed to orientational glass transition. The apparent activation energy was determined as 344.4 and 304.8 meV for film A and B respectively, larger than the value 280 meV in bulk C-60. Ngai's correlated-state model is used to simulate relaxation spectrum, and the real activation energies were calculated, which agree with the reported activation value in bulk C-60 very well. We propose that the structure imperfection have contributed additional dipole correlation interactions, which make the relaxation behavior of our C-60 films deviate from that of bulk C-60.
引用
收藏
页码:2651 / 2656
页数:6
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