Hopping conduction and LF noise in structures with Ge nanoclusters grown on oxidized Si(001)

被引：1

作者：

Lysenko, V. S. ^{[1
]}

Gomeniuk, Y. V. ^{[1
]}

Kudina, V. N. ^{[1
]}

Garbar, N. P. ^{[1
]}

Kondratenko, S. V. ^{[2
]}

Melnichuk, Ye. Ye. ^{[2
]}

Kozyrev, Y. N. ^{[3
]}

机构：

[1] NAS Ukraine, Lashkaryov Inst Semicond Phys, Kiev, Ukraine

[2] Natl Taras Shevchenko Univ, Dept Phys, Kiev, Ukraine

[3] Chuiko Inst Surface Chem, Kiev, Ukraine

来源：

JOURNAL OF MATERIALS SCIENCE | 2016年 / 51卷 / 19期

关键词：

1/F NOISE; SILICON; SEMICONDUCTORS; INTERFACE; TRANSPORT; DOTS;

D O I：

10.1007/s10853-016-0071-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Conductivity, capacitance, and the low-frequency noise in structures with Ge nanoclusters grown on oxidized Si(001) have been investigated for the temperature range of 120-290 K and frequencies from 1 kHz to 1 MHz in co-planar geometry. The Mott's variable range hopping through quasi-band of localized states at the Fermi level of nanoclusters and their interfaces was found to be the dominant transport mechanism in the surface conductivity channel. The quasi-band width was found to be about 110 meV, while the middle is located at E-v + 140 meV. The maximum of reduced conductivity and capacitance were observed under conditions when Fermi level is in the middle of this band. A significant increase of the 1/f noise level with decreasing temperature found for the structures studied was ascribed to accompany hopping transport of charge carriers within the quasi-band with a high density of localized states.

引用

页码：8799 / 8811

页数：13

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