Tuning of the electrical characteristics of organic bistable devices by varying the deposition rate of Alq3 thin film

被引：37
作者：
Lee, Po-Tsung [1 ,2 ]
Chang, Tzu-Yueh [1 ,2 ]
Chen, Szu-Yuan [1 ,3 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan
[3] Natl Chiao Tung Univ, Display Inst, Hsinchu 300, Taiwan
来源：
ORGANIC ELECTRONICS | 2008年 / 9卷 / 05期
关键词：
Alq(3); organic bistable device;
D O I：
10.1016/j.orgel.2008.06.003
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Organic bistable devices with an Al/Alq(3)/n-type Si structure are investigated at different deposition rates of Alq3 thin film. We can obtain current-voltage characteristics of these devices similar to those of metal/organic semiconductor/metal structures that are widely used for organic bistable devices. The bistable effect of the Al/Alq(3)/n-type Si structure is primarily caused by the interface defects at the Al/Alq(3) junction. Moreover, the electrical properties of these devices can be modified and controlled by utilizing the appropriate deposition rates of the Alq(3) thin film by thermal deposition. XPS, AFM, and GIXRD measurements are performed to characterize the properties of Alq(3) thin film and Alq(3)/Al interface. This type of devices involves an extremely simple fabrication process and offers great potential in future advanced organic electronics. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：916 / 920
页数：5
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