High resistance ratio of bipolar resistive switching in a multiferroic/high-K Bi(Fe0.95Cr0.05)O3/ZrO2/Pt heterostructure

被引：16

作者：

Dong, B. W. ^{[1
]}

Miao, Jun ^{[1
]}

Han, J. Z. ^{[1
]}

Shao, F. ^{[1
]}

Yuan, J. ^{[2
]}

Meng, K. K. ^{[1
]}

Wu, Y. ^{[1
]}

Xu, X. G. ^{[1
]}

Jiang, Y. ^{[1
]}

机构：

[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2018年 / 434卷

基金：

美国国家科学基金会;

关键词：

Multiferroic Bi(Fe0.95Cr0.05)O-3; High-K; Resistive switching; Ferroelectric polarization;

D O I：

10.1016/j.apsusc.2017.10.100

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

An novel heterostructure composed of multiferroic Bi(Fe0.95Cr0.05)O-3 (BFCO) and high-K ZrO2 (ZO) layers is investigated. Ferroelectric and electrical properties of the BFZO/ZO heterostructure have been investigated. A pronounced bipolar ferroelectric resistive switching characteristic was achieved in the heterostructure at room temperature. Interestingly, the BFCO/ZO structures exhibit a reproducible resistive switching with a high On/Off resistance ratio similar to 2 x 10(3) and long retention time. The relationship between polarization and band structure at the interface of BFCO/ZO bilayer under the positive and negative sweepings has been discussed. As a result, the BFCO/ZO multiferroic/high-K heterostructure with high On/Off resistance ratio and long retention characterizes, exhibits a potential in future nonvolatile memory application. (c) 2017 Elsevier B.V. All rights reserved.

引用

页码：687 / 692

页数：6

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