High resistance ratio of bipolar resistive switching in a multiferroic/high-K Bi(Fe0.95Cr0.05)O3/ZrO2/Pt heterostructure

被引：15
|
作者：
Dong, B. W. [1 ]
Miao, Jun [1 ]
Han, J. Z. [1 ]
Shao, F. [1 ]
Yuan, J. [2 ]
Meng, K. K. [1 ]
Wu, Y. [1 ]
Xu, X. G. [1 ]
Jiang, Y. [1 ]
机构：
[1] Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2018年 / 434卷
基金：
美国国家科学基金会;
关键词：
Multiferroic Bi(Fe0.95Cr0.05)O-3; High-K; Resistive switching; Ferroelectric polarization;
D O I：
10.1016/j.apsusc.2017.10.100
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
An novel heterostructure composed of multiferroic Bi(Fe0.95Cr0.05)O-3 (BFCO) and high-K ZrO2 (ZO) layers is investigated. Ferroelectric and electrical properties of the BFZO/ZO heterostructure have been investigated. A pronounced bipolar ferroelectric resistive switching characteristic was achieved in the heterostructure at room temperature. Interestingly, the BFCO/ZO structures exhibit a reproducible resistive switching with a high On/Off resistance ratio similar to 2 x 10(3) and long retention time. The relationship between polarization and band structure at the interface of BFCO/ZO bilayer under the positive and negative sweepings has been discussed. As a result, the BFCO/ZO multiferroic/high-K heterostructure with high On/Off resistance ratio and long retention characterizes, exhibits a potential in future nonvolatile memory application. (c) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：687 / 692
页数：6
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