Fast X-ray detectors based on bulk β-Ga2O3 (Fe)

被引:36
作者
Hany, Ibrahim [1 ]
Yang, Ge [1 ]
Chung, Ching-Chang [2 ]
机构
[1] North Carolina State Univ, Dept Nucl Engn, Raleigh, NC 27607 USA
[2] North Carolina State Univ, Analyt Instrumentat Facil, Raleigh, NC 27695 USA
基金
美国国家科学基金会;
关键词
SCINTILLATION PROPERTIES;
D O I
10.1007/s10853-020-04665-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
(010) EFG-grown Fe-doped beta-Ga2O3 was tested as a low-noise X-ray detector with Ti/Au electrodes vertical structure. Its performance at low, high and no applied voltages was examined. The fabricated detector showed high X-ray detection performance manifested in its signal's short fall and rise time (< 0.3 s) in all operation modes, showing two orders of magnitude decrease in response time of beta-Ga2O3 X-ray detectors. The same temporal response was exhibited by a tested Au/Ni/beta-Ga2O3/Ti/Au device. The detector's signal is also characterized by excellent linear relation with X-ray tube current and high signal-to-noise ratio (SNR) optimized at - 5 V (> 10(3)). Moreover, the X-ray-induced current signal exhibits high stability. Sub-band UV photocurrent signal showed a significantly slower response compared to X-ray-induced conductivity signal. Possible charge transport mechanisms involving ion migration are suggested and discussed. In this study, Fe doping is shown to significantly improve X-ray detection performance of Ga2O3, consolidating the applicability of Ga2O3 as a next-generation X-ray detector functioning with low power, high SNR and linearity, and significantly improved transient characteristics.
引用
收藏
页码:9461 / 9469
页数:9
相关论文
共 32 条
[1]  
[Anonymous], 2017, J. Vacuum Sci. Technol. B
[2]  
Berger M., NIST, PML, DOI [10.18434/T48G6X, DOI 10.18434/T48G6X]
[3]   Review of gallium-oxide-based solar-blind ultraviolet photodetectors [J].
Chen, Xuanhu ;
Ren, Fangfang ;
Gu, Shulin ;
Ye, Jiandong .
PHOTONICS RESEARCH, 2019, 7 (04) :381-415
[4]   X-ray detectors based on Fe doped GaN photoconductors [J].
Fu, Kai ;
Yu, Guohao ;
Yao, Changsheng ;
Wang, Guo ;
Lu, Min ;
Zhang, Guoguang .
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2011, 5 (5-6) :187-189
[5]   Low temperature cathodoluminescence study of Fe-doped β-Ga2O3 [J].
Hany, Ibrahim ;
Yang, Ge ;
Zhou, Chuanzhen Elaine ;
Sun, Cheng ;
Gundogdu, Kenan ;
Seyitliyev, Dovletgeldi ;
Danilov, Evgeny O. ;
Castellano, Felix N. ;
Sun, Dali ;
Vetter, Eric .
MATERIALS LETTERS, 2019, 257
[6]   Ultra-fast scintillation properties of β-Ga2O3 single crystals grown by Floating Zone method [J].
He, Nuotian ;
Tang, Huili ;
Liu, Bo ;
Zhu, Zhichao ;
Li, Qiu ;
Guo, Chao ;
Gu, Mu ;
Xu, Jun ;
Liu, Jinliang ;
Xu, Mengxuan ;
Chen, Liang ;
Ouyang, Xiaoping .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2018, 888 :9-12
[7]   Characterizations of an X-ray detector based on a Zn2SiO4 film [J].
He, Yongning ;
Zhao, Xiaolong ;
Wang, Xuyang ;
Chen, Liang ;
Peng, Wenbo ;
Ouyang, Xiaoping .
SENSORS AND ACTUATORS A-PHYSICAL, 2015, 236 :98-103
[8]   For the mechanism of the photoelectric primary current in insulating crystals. [J].
Hecht, Karl .
ZEITSCHRIFT FUR PHYSIK, 1932, 77 (3-4) :235-245
[9]   Iron and intrinsic deep level states in Ga2O3 [J].
Ingebrigtsen, M. E. ;
Varley, J. B. ;
Kuznetsov, A. Yu. ;
Svensson, B. G. ;
Alfieri, G. ;
Mihaila, A. ;
Badstubner, U. ;
Vines, L. .
APPLIED PHYSICS LETTERS, 2018, 112 (04)
[10]   Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length [J].
Lee, Jonathan ;
Flitsiyan, Elena ;
Chernyak, Leonid ;
Yang, Jiancheng ;
Ren, Fan ;
Pearton, Stephen J. ;
Meyler, Boris ;
Salzman, Y. Joseph .
APPLIED PHYSICS LETTERS, 2018, 112 (08)