Magnetocapacitance and magnetoresistance near room temperature in a ferromagnetic semiconductor:: La2NiMnO6

被引:690
作者
Rogado, NS
Li, J
Sleight, AW
Subramanian, MA
机构
[1] DuPont Cent Res & Dev, Wilmington, DE 19880 USA
[2] Oregon State Univ, Dept Chem, Corvallis, OR 97331 USA
关键词
D O I
10.1002/adma.200500737
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The effects of magnetoresistance and magnetocapacitance in the ferromagnetic semiconducting compound of La2NiMnO6 near room temperature, were analyzed. The single-phase samples of La 2NiMnO6 were prepared using conventional solid-state synthetic methods. The magnetic susceptibility of this compound in an applied field of 1T shows a magnetic transition at ∼280 K, indicating the onset of ferromagnetic long-range ordering. The results show that the appearance of both magnetoresistance and magnetocapacitance effects in La2NiMnO 6 indicates coupling between the magnetic, electronic, and dielectric properties, which may be controlled by the application of magnetic fields.
引用
收藏
页码:2225 / 2227
页数:3
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