ANSYS based 3D electro-thermal simulations for the evaluation of power MOSFETs robustness

被引：23

作者：

de Filippis, Stefano ^{[1
,2
]}

Kosel, Vladimir ^{[2
]}

Dibra, Donald ^{[3
]}

Decker, Stefan ^{[3
]}

Koeck, Helmut ^{[2
,4
]}

Irace, Andrea ^{[1
]}

机构：

[1] Univ Naples Federico II, Dipartimento Ingn Biomed Elettron & Telecomunicaz, I-80125 Naples, Italy

[2] Kompetenzzentrum Automobil & Ind Elekt GmbH, KAI, A-9524 Villach, Austria

[3] Infineon Technol AG, D-85579 Neubiberg, Germany

[4] Alpen Adria Univ, Inst Smart Syst Technol, A-9020 Klagenfurt, Austria

来源：

MICROELECTRONICS RELIABILITY | 2011年 / 51卷 / 9-11期

关键词：

D O I：

10.1016/j.microrel.2011.06.047

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electro-thermal simulators are useful tools for introducing design and technology improvements during the design process of power MOSFET transistors. They are also helpful to predict the device behavior when operating under extreme electrical and temperature conditions and thus to predict its thermal robustness. Such simulators have to correctly take into account interactions between electrical and thermal behavior. In this paper we propose a new method to perform electro-thermal simulations of power MOSFETs using ANSYS simulator. The electrical and the thermal problem are fully coupled and iteratively solved using the FEM method. By means of a test chip, simulations and comparison with measurement have been performed in order to validate the simulation approach. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：1954 / 1958

页数：5

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