Barrier breakdown in multiple quantum well structure

被引：23

作者：

Gomez, Aurore ^{[1
,2
]}

Berger, Vincent ^{[1
,2
]}

Pere-Laperne, Nicolas ^{[3
]}

De Vaulchier, Louis-Anne ^{[3
]}

机构：

[1] Alcatel Thales 3 5 Lab, F-91767 Palaiseau, France

[2] Univ Paris 07, Lab MPQ, F-75205 Paris 13, France

[3] Ecole Normale Super, Lab Pierre Aigrain, F-75005 Paris, France

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 20期

关键词：

Semiconductor quantum wells;

D O I：

10.1063/1.2927472

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We explore a regime of unipolar electronic transport in a multiple quantum well structure with very large current discontinuities-up to five orders of magnitude. Magnetotransport experiments reveal different transport regimes. Quantum well impact ionization shifts the structure from a resistive "down" state, where the current flows through interwell quantum tunneling, to a highly conductive "up" state. In the latter regime, the current leaks through a barrier suddenly broken down because of an efficient ionization of the first quantum well. This mechanism might open the way to original devices based on unipolar impact ionization. (C) 2008 American Institute of Physics.

引用

页数：3

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