Electroluminescence from amorphous GIZO/p-GaN heterojunction light-emitting diodes

被引：0

作者：

Jeong, Seonghoon ^{[1
]}

Ahn, Kwang-Soon ^{[2
]}

Kim, Hyunsoo ^{[1
]}

机构：

[1] Jeonbuk Natl Univ, Semicond Phys Res Ctr, Sch Semicond & Chem Engn, Jeonju 54896, South Korea

[2] Yeungam Univ, Sch Chem Engn, Gyongsan 38541, South Korea

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2020年 / 113卷 / 113期

关键词：

Light emitting diode; Amorphous; Gallium-indium-zinc oxde; Heterojunction; ROOM-TEMPERATURE; ZNO; FABRICATION; EMISSION; ARRAYS;

D O I：

10.1016/j.mssp.2020.105053

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electroluminescence from the amorphous gallium-indium-zinc oxide (a-GIZO)/p-GaN heterojunction light-emitting diodes (LEDs) were demonstrated. The heterojunction LEDs showed a current flow under both forward and reverse bias voltages. The light emissions were observed at around 410 nm (originating from p-GaN) and similar to 450-800 nm (originating from interfacial layer and/or from a-GIZO), which were particularly pronounced under reverse bias condition. As a result, the standard white light with the chromaticity coordinate of (0.2899, 0.3034) was obtained.

引用

页数：5

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