High-Resolution Angle-Resolved Photoemission Study of Quasi-One-Dimensional Semiconductor In4Se3

被引：13

作者：

Fukutani, Keisuke ^{[1
,2
]}

Miyata, Yasunari ^{[1
]}

Matsuzaki, Idea ^{[1
]}

Galiy, Pavlo V. ^{[3
]}

Dowben, Peter A. ^{[4
]}

Sato, Takafumi ^{[1
]}

Takahashi, Takashi ^{[1
,5
]}

机构：

[1] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan

[2] Tohoku Univ, Inst Excellence Higher Educ, Sendai, Miyagi 9808576, Japan

[3] I Franko Lviv Natl Univ, Dept Elect, UA-79005 Lvov, Ukraine

[4] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA

[5] Tohoku Univ, Adv Inst Mat Res, WPI Res Ctr, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2015年 / 84卷 / 07期

基金：

日本学术振兴会;

关键词：

TEMPERATURE THERMOELECTRIC PROPERTIES; BAND-STRUCTURE; SINGLE-CRYSTAL; PHOTOLUMINESCENCE; PERFORMANCE; CA3CO2O6; FIGURE; FILMS; MERIT;

D O I：

10.7566/JPSJ.84.074710

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present a comprehensive characterization of the electronic structure of anisotropic layered semiconductor In4Se3 by means of high-resolution angle-resolved photoemission spectroscopy. Our study reveals the quasi-one-dimensionality in the electronic structure of In4Se3 and provides a direct estimate of its band gap (0.86 +/- 0.05 eV). The identification of the quasi-one-dimensional electronic structure gives new insights into the electronic contribution to the high thermoelectric figure of merit of In4Se3.

引用

页数：6

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