Microstructure evolution of hydrogenated silicon thin films at different hydrogen incorporation

被引:3
|
作者
Hwang, HL
Wang, KC
Hsu, KC
Wang, RY
Yew, TR
Loferski, JJ
机构
[1] Department of Electrical Engineering, National Tsing Hua University
[2] Brown University, Providence
关键词
D O I
10.1016/S0169-4332(96)00883-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
This paper describes the microstructure evolution of hydrogenated silicon films containing various amounts of hydrogen, Microcrystalline silicon films were produced when the hydrogen content of the films was adjusted by using the diluted-hydrogen methods. Polycrystalline silicon films having grain sizes in the micrometer range were deposited at low temperature (250 degrees C) by ECR-CVD with the hydrogen-dilution method. The microcrystalline and polycrystalline films were characterized by NMR, FTIR, Raman, X-ray and optical spectroscopy and electrical measurements, The results evaluate the possibility of even larger grain silicon films suitable for high performance solar cells which avoid the fundamental difficulties of amorphous Si:H solar cells.
引用
收藏
页码:741 / 749
页数:9
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