Selective growth of GaAs nanostructures and subsequent guided self-assembly of InAs quantum dots on nanoimprint lithography patterned SiO2/GaAs substrates

被引：2

作者：

Tukiainen, A. ^{[1
]}

Tommila, J. ^{[1
]}

Aho, A. ^{[1
]}

Schramm, A. ^{[1
]}

Viheriala, J. ^{[1
]}

Ahorinta, R. ^{[1
]}

Dumitrescu, M. ^{[1
]}

Pessa, M. ^{[1
]}

Guina, M. ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, Tampere 33101, Finland

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 323卷 / 01期

基金：

芬兰科学院;

关键词：

Low dimensional structures; Nanostructures; Molecular beam epitaxy; Semiconducting III-V materials; EPITAXY;

D O I：

10.1016/j.jcrysgro.2010.12.084

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report a comparative study on selective epitaxy of nanostructures with different geometrical shapes. GaAs pyramids were grown by molecular beam epitaxy into circular holes, L-shaped holes, and cross-shaped holes, patterned using nanoimprint lithography. These GaAs nanostructures were used for guided-self assembly of InAs QDs. The results show that the initial shapes of the nanostructures have a strong effect on the nucleation of InAs QDs. Cross-shaped holes were found to be the most resilient against form changes when the height of the pyramid was increased. On the other hand the L-shaped islands became unusable for QD growths when more than twenty nanometers of GaAs was grown onto the patterns. Photoluminescence measurements on QDs embedded within the GaAs islands showed that the peak emission wavelength was similar for all types of pyramids. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：201 / 205

页数：5

共 12 条

[1] Microcavity single-photon-emitting diode [J].

Bennett, AJ ;

Unitt, DC ;

See, P ;

Shields, AJ ;

Atkinson, P ;

Cooper, K ;

Ritchie, DA .

APPLIED PHYSICS LETTERS, 2005, 86 (18) :1-3

[2] Selective area growth of InAs quantum dots formed on a patterned GaAs substrate [J].

Birudavolu, S ;

Nuntawong, N ;

Balakrishnan, G ;

Xin, YC ;

Huang, S ;

Lee, SC ;

Brueck, SRJ ;

Hains, CP ;

Huffaker, DL .

APPLIED PHYSICS LETTERS, 2004, 85 (12) :2337-2339

[3] Directed self-assembly of single quantum dots for telecommunication wavelength optical devices [J].

Dalacu, Dan ;

Reimer, Michael E. ;

Frederick, Simon ;

Kun, Danny ;

Lapointe, Jean ;

Poole, Philip J. ;

Aers, Geof C. ;

Williams, Robin L. ;

McKinnon, W. Ross ;

Korkusinski, Marek ;

Hawrylak, Pawel .

LASER & PHOTONICS REVIEWS, 2010, 4 (02) :283-299

[4] Pyramidal quantum dot structures by self-limited selective area metalorganic vapor phase epitaxy [J].

Fukui, T ;

Kumakura, K ;

Nakakoshi, K ;

Motohisa, J .

SOLID-STATE ELECTRONICS, 1996, 40 (1-8) :799-802

[5] Molecular-beam epitaxial growth of one-dimensional rows of InAs quantum dots on nanoscale-patterned GaAs [J].

Lee, SC ;

Dawson, LR ;

Malloy, KJ ;

Brueck, SRJ .

APPLIED PHYSICS LETTERS, 2001, 79 (16) :2630-2632

[6] Selective growth and associated faceting and lateral overgrowth of GaAs on a nanoscale limited area bounded by a SiO2 mask in molecular beam epitaxy [J].

Lee, SC ;

Malloy, KJ ;

Dawson, LR ;

Brueck, SRJ .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (11) :6567-6571

[7] ANISOTROPIC SURFACE MIGRATION OF GA ATOMS ON GAAS(001) [J].

OHTA, K ;

KOJIMA, T ;

NAKAGAWA, T .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :71-74

[8] Photonic crystal microcavities with self-assembled InAs quantum dots as active emitters [J].

Reese, C ;

Becher, C ;

Imamoglu, A ;

Hu, E ;

Gerardot, BD ;

Petroff, PM .

APPLIED PHYSICS LETTERS, 2001, 78 (16) :2279-2281

[9] Selective growth experiments on gallium arsenide (100) surfaces patterned using UV-nanoimprint lithography [J].

Tukiainen, A. ;

Viheriala, J. ;

Niemi, T. ;

Rytkonen, T. ;

Kontio, J. ;

Pessa, M. .

MICROELECTRONICS JOURNAL, 2006, 37 (12) :1477-1480

[10] InAs quantum dot formation on GaAs pyramids by selective area MOVPE [J].

Umeda, T ;

Kumakura, K ;

Motohisa, J ;

Fukui, T .

PHYSICA E, 1998, 2 (1-4) :714-719

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