High mobility of dithiophene-tetrathiafulvalene single-crystal organic field effect transistors

被引：322
作者：
Mas-Torrent, M
Durkut, M
Hadley, P
Ribas, X
Rovira, C
机构：
[1] Delft Univ Technol, Dept NanoSci, NL-2628 CJ Delft, Netherlands
[2] Inst Ciencia Mat Barcelona, Bellaterra 08193, Spain
来源：
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2004年 / 126卷 / 04期
关键词：
D O I：
10.1021/ja0393933
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Single-crystal field effect transistors of the organic semiconductor dithiophene-tetrathiafulvalene (DT-TTF) were prepared by drop casting. Long, thin crystals connected two microfabricated gold electrodes, and a silicon substrate was used as a back gate. The highest hole mobility observed was 1.4 cm2/Vs, which is the highest reported for an organic semiconductor not based on pentacene. A high ON/OFF ratio of at least 7 × 105 was obtained for this device. Copyright © 2004 American Chemical Society.
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页码：984 / 985
页数：2
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