High mobility of dithiophene-tetrathiafulvalene single-crystal organic field effect transistors

被引：324

作者：

Mas-Torrent, M

Durkut, M

Hadley, P

Ribas, X

Rovira, C

机构：

[1] Delft Univ Technol, Dept NanoSci, NL-2628 CJ Delft, Netherlands

[2] Inst Ciencia Mat Barcelona, Bellaterra 08193, Spain

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2004年 / 126卷 / 04期

关键词：

D O I：

10.1021/ja0393933

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Single-crystal field effect transistors of the organic semiconductor dithiophene-tetrathiafulvalene (DT-TTF) were prepared by drop casting. Long, thin crystals connected two microfabricated gold electrodes, and a silicon substrate was used as a back gate. The highest hole mobility observed was 1.4 cm2/Vs, which is the highest reported for an organic semiconductor not based on pentacene. A high ON/OFF ratio of at least 7 × 105 was obtained for this device. Copyright © 2004 American Chemical Society.

引用

页码：984 / 985

页数：2

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