Electronic and thermal properties of magnesium-doped a-Se films

被引：3

作者：

Dash, Isha ^{[1
]}

Tonchev, Dan ^{[1
]}

Belev, George ^{[1
]}

Mani, Habib ^{[2
]}

Kasap, Safa ^{[1
]}

机构：

[1] Univ Saskatchewan, Dept Elect & Comp Engn, Saskatoon, SK S7N 5A9, Canada

[2] Anrad Corp, St Laurent, PQ H4R 2P1, Canada

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 1 | 2009年 / 6卷

基金：

加拿大自然科学与工程研究理事会;

关键词：

RAY IMAGE DETECTORS; AMORPHOUS SELENIUM;

D O I：

10.1002/pssc.200881283

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have studied the effects of adding small amounts of Mg on the electrical and thermal properties of a-Se films. The addition of Mg in the ppm range has resulted in significant changes in the charge transport and stability. The doped samples have shown to be excellent n-like layers which have electron ranges much greater than hole ranges, mu(e)tau(e) >> mu(h)tau(h). The n-like layers block the injection of holes from the positive electrode which results in a lower dark current in a-Se based X-ray detectors. The Differential scanning calorimetry studies have shown that a-Se doped with lower concentrations of Mg is more stable than samples with higher concentrations. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：S98 / S101

页数：4

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