Highly strained 1.22-μm InGaAs lasers grown by MOVPE

被引：9

作者：

Chen, W. C. ^{[1
]}

Su, Y. K. ^{[1
]}

Chuang, R. W. ^{[1
]}

Yu, H. C. ^{[1
]}

Tsai, M. C. ^{[1
]}

Cheng, K. Y. ^{[1
]}

Horng, J. B. ^{[2
]}

Hu, C. ^{[2
]}

Tsau, Seth ^{[2
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan

[2] Ind Technol Res Inst, Laser Applicat Technol Ctr, Tainan 734, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2008年 / 20卷 / 1-4期

关键词：

InGaAs; lasers; metal-organic vapor phase epitaxy (MOVPE); photoluminescence (PL);

D O I：

10.1109/LPT.2007.913745

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the highly strained In0.39Ga0.61As-GaAs lasers grown by metal-organic vapor phase epitaxy were studied. The InGaAs lasers could emit at 1.22 mu m under continuous-wave conditions, whereas the threshold current density (J(th)) and transparency current density (J(tr)) were 140 and 37.2 A/cm(2), respectively. To the best of our knowledge, the J(tr) was the lowest among the reported InGaAs lasers longer than 1.2 mu m. The characteristic temperature (T-0) was 146.2 K indicating the good temperature stability. These excellent laser characteristics could be attributed to the optimized growth conditions.

引用

页码：264 / 266

页数：3

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