Picosecond response times in GaAs/AlGaAs core/shell nanowire-based photodetectors

被引：101

作者：

Gallo, Eric M. ^{[1
]}

Chen, Guannan ^{[1
]}

Currie, Marc ^{[2
]}

McGuckin, Terrence ^{[1
]}

Prete, Paola ^{[3
]}

Lovergine, Nico ^{[4
]}

Nabet, Bahram ^{[5
]}

Spanier, Jonathan E. ^{[1
]}

机构：

[1] Drexel Univ, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA

[2] USN, Res Lab, Div Opt Sci, Washington, DC 20375 USA

[3] Consiglio Nazl Ric CNR, Ist Microelettron Microsistemi IMM, I-73100 Lecce, Italy

[4] Univ Salento, Dept Innovat Engn, I-73100 Lecce, Italy

[5] Drexel Univ, Dept Elect & Comp Engn, Philadelphia, PA 19104 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 24期

基金：

美国国家科学基金会;

关键词：

HETEROSTRUCTURES;

D O I：

10.1063/1.3600061

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-speed metal-semiconductor-metal (MSM) photodetectors based on Schottky-contacted core/shell GaAs/AlGaAs and bare GaAs nanowires were fabricated and characterized. The measured core/shell temporal response has a similar to 10 ps full-width at half-maximum and an estimated corrected value less than 5 ps. The bare GaAs devices exhibit a slower response (similar to 35 ps) along with a slow decaying persistent photocurrent (similar to 80 s). The core/shell devices exhibit significantly improved dc and high-speed performance over bare nanowires and comparable performance to planar MSM photodetectors. The picosecond temporal response, coupled with picoampere dark current, demonstrate the potential for core/shell nanowires in high-speed imaging arrays and on-chip optical interconnects. (C) 2011 American Institute of Physics. [doi:10.1063/1.3600061]

引用

页数：3

共 17 条

[1]

AGRAWALL GP, 2002, FIBER OPTIC COMMUNIC, P194

[2] On direct-writing methods for electrically contacting GaAs and Ge nanowire devices [J].

Chen, Guannan ;

Gallo, Eric M. ;

Burger, Joan ;

Nabet, Bahram ;

Cola, Adriano ;

Prete, Paola ;

Lovergine, Nico ;

Spanier, Jonathan E. .

APPLIED PHYSICS LETTERS, 2010, 96 (22)

[3] Reduction of hole transit time in GaAs MSM photodetectors by p-type delta-doping [J].

Chyi, JI ;

Chien, YJ ;

Yuang, RH ;

Shieh, JL ;

Pan, JW ;

Chen, JS .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (11) :1525-1527

[4] Impact of surfaces on the optical properties of GaAs nanowires [J].

Demichel, O. ;

Heiss, M. ;

Bleuse, J. ;

Mariette, H. ;

Fontcuberta i Morral, A. .

APPLIED PHYSICS LETTERS, 2010, 97 (20)

[5] InAs/InP radial nanowire heterostructures as high electron mobility devices [J].

Jiang, Xiaocheng ;

Xiong, Qihua ;

Nam, Sungwoo ;

Qian, Fang ;

Li, Yat ;

Lieber, Charles M. .

NANO LETTERS, 2007, 7 (10) :3214-3218

[6] A 14-ps full width at half maximum high-speed photoconductor fabricated with intersecting InP nanowires on an amorphous surface [J].

Logeeswaran, V. J. ;

Sarkar, A. ;

Islam, M. S. ;

Kobayashi, N. P. ;

Straznicky, J. ;

Li, Xuema ;

Wu, Wei ;

Mathai, Sagi ;

Tan, M. R. T. ;

Wang, Shih-Yuan ;

Williams, R. S. .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2008, 91 (01) :1-5

[7] Epitaxial III-V nanowires on silicon [J].

Mårtensson, T ;

Svensson, CPT ;

Wacaser, BA ;

Larsson, MW ;

Seifert, W ;

Deppert, K ;

Gustafsson, A ;

Wallenberg, LR ;

Samuelson, L .

NANO LETTERS, 2004, 4 (10) :1987-1990

[8] Photodetectors based on heterostructures for opto-electronic applications [J].

Nabet, B ;

Cola, A ;

Cataldo, A ;

Chen, XY ;

Quaranta, F .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2003, 51 (10) :2063-2072

[9] PD-ON-GAAS SCHOTTKY CONTACT - ITS BARRIER HEIGHT AND RESPONSE TO HYDROGEN [J].

NIE, HY ;

NANNICHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1991, 30 (05) :906-913

[10] Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures [J].

Perera, S. ;

Fickenscher, M. A. ;

Jackson, H. E. ;

Smith, L. M. ;

Yarrison-Rice, J. M. ;

Joyce, H. J. ;

Gao, Q. ;

Tan, H. H. ;

Jagadish, C. ;

Zhang, X. ;

Zou, J. .

APPLIED PHYSICS LETTERS, 2008, 93 (05)

← 1 2 →