Picosecond response times in GaAs/AlGaAs core/shell nanowire-based photodetectors

被引:99
作者
Gallo, Eric M. [1 ]
Chen, Guannan [1 ]
Currie, Marc [2 ]
McGuckin, Terrence [1 ]
Prete, Paola [3 ]
Lovergine, Nico [4 ]
Nabet, Bahram [5 ]
Spanier, Jonathan E. [1 ]
机构
[1] Drexel Univ, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
[2] USN, Res Lab, Div Opt Sci, Washington, DC 20375 USA
[3] Consiglio Nazl Ric CNR, Ist Microelettron Microsistemi IMM, I-73100 Lecce, Italy
[4] Univ Salento, Dept Innovat Engn, I-73100 Lecce, Italy
[5] Drexel Univ, Dept Elect & Comp Engn, Philadelphia, PA 19104 USA
基金
美国国家科学基金会;
关键词
HETEROSTRUCTURES;
D O I
10.1063/1.3600061
中图分类号
O59 [应用物理学];
学科分类号
摘要
High-speed metal-semiconductor-metal (MSM) photodetectors based on Schottky-contacted core/shell GaAs/AlGaAs and bare GaAs nanowires were fabricated and characterized. The measured core/shell temporal response has a similar to 10 ps full-width at half-maximum and an estimated corrected value less than 5 ps. The bare GaAs devices exhibit a slower response (similar to 35 ps) along with a slow decaying persistent photocurrent (similar to 80 s). The core/shell devices exhibit significantly improved dc and high-speed performance over bare nanowires and comparable performance to planar MSM photodetectors. The picosecond temporal response, coupled with picoampere dark current, demonstrate the potential for core/shell nanowires in high-speed imaging arrays and on-chip optical interconnects. (C) 2011 American Institute of Physics. [doi:10.1063/1.3600061]
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页数:3
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