Atomic and electronic structure of bismuth-bilayer-terminated Bi2Se3(0001) prepared by atomic hydrogen etching

被引：28

作者：

Shokri, Roozbeh ^{[1
]}

Meyerheim, Holger L. ^{[1
]}

Roy, Sumalay ^{[1
]}

Mohseni, Katayoon ^{[1
]}

Ernst, A. ^{[1
]}

Otrokov, M. M. ^{[2
,3
]}

Chulkov, E. V. ^{[2
,3
,4
,5
]}

Kirschner, J. ^{[1
,6
]}

机构：

[1] Max Planck Inst Mikrostrukturphys, Weinberg 2, D-06120 Halle, Germany

[2] Tomsk State Univ, Tomsk 634050, Russia

[3] Donostia Int Phys Ctr, San Sebastian 20018, Basque Country, Spain

[4] Ctr Fis Mat CFM MPC, Dept Fis Mat UPV EHU, San Sebastian 20080, Basque Country, Spain

[5] Ctr Mixto CSIC UPV EHU, San Sebastian 20080, Basque Country, Spain

[6] Univ Halle Wittenberg, Inst Phys, D-06099 Halle, Germany

来源：

PHYSICAL REVIEW B | 2015年 / 91卷 / 20期

关键词：

SINGLE DIRAC CONE; INSULATOR; SURFACE; STATES;

D O I：

10.1103/PhysRevB.91.205430

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A bilayer of bismuth is recognized as a prototype two-dimensional topological insulator. Here we present a simple and well reproducible top-down approach to prepare a flat and well ordered bismuth bilayer with a lateral size of several hundred nanometers on Bi2Se3(0001). Using scanning tunneling microscopy, surface x-ray diffraction, and Auger electron spectroscopy we show that exposure of Bi2Se3(0001) to atomic hydrogen completely removes selenium from the top quintuple layer. The band structure of the system, calculated from first principles for the experimentally derived atomic structure, is in excellent agreement with recent photoemission data. Our results open interesting perspectives for the study of topological insulators in general.

引用

页数：7

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