3D microstructure model and thermal shock failure mechanism of a Si3N4bonded SiC ceramic refractory with SiC high volume ratio particles

被引:8
作者
Yuan, Shuowei [1 ,2 ]
Yang, Zichun [1 ,2 ]
Chen, Guobing [1 ,2 ]
机构
[1] Naval Univ Engn, Inst High Temp Struct Composite Mat Naval Ship, 717 Jiefang St, Wuhan 430033, Hubei, Peoples R China
[2] Naval Univ Engn, Sch Power Engn, Wuhan, Hubei, Peoples R China
基金
中国国家自然科学基金;
关键词
3D microstructure model; Ceramic refractory; High volume fraction; Modified 3D Voronoi tessellation method; Failure mechanism; BRITTLE MATERIALS; FATIGUE-CRACK; FRACTURE; DAMAGE; PROPAGATION; COMPOSITES; PREDICTION; TOUGHNESS; STRENGTH; GROWTH;
D O I
10.1016/j.ceramint.2018.11.093
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study, an efficient method was proposed to establish 3D microstructure model of a Si3N4-bonded SiC ceramic refractory with SiC high volume ratio particles and its failure mechanism under thermal shock was studied based on the established microstructure model. The proposed modeling method based on modified 3D Voronoi tessellation method and "precise shrinkage ratio method" was able to establish 3D geometric model of a SiC ceramic refractory with SiC high volume fraction particles more quickly than usual methods. The modified 3D Voronoi tessellation method generated Voronoi polyhedrons (VPs) limited in finite space perfectly. The proposed "precise shrinkage ratio method" achieved a precise volume fraction of SiC particles in the established microstructure model. The crack initiation and propagation under thermal shock were calculated by employing the extended finite element method (XFEM) on the established microstructure model. The results showed the failure mode on micro-scale clearly and efforts of interface strength on the failure mode were also explored. The proposed modeling method was especially suitable for establishing 3D microstructure models of ceramic composites or isotropic metal-ceramic particle composites with high volume fraction particles and extended the use of VPs.
引用
收藏
页码:4219 / 4229
页数:11
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