Simple model for time-dependent dielectric breakdown in inter- and intralevel low-k dielectrics -: art. no. 084109

被引:142
作者
Lloyd, JR [1 ]
Liniger, E [1 ]
Shaw, TM [1 ]
机构
[1] IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
关键词
D O I
10.1063/1.2112171
中图分类号
O59 [应用物理学];
学科分类号
摘要
A simple physical model is applied to time-dependent dielectric breakdown failure in ultralow-k(k=2.3) interlevel dielectrics. The model assumes that failure depends on the probability that an electron will have enough energy to damage the dielectric as it is accelerated in an electric field. It is seen that the characteristic form of the dependence of failure time on voltage or electric field is primarily dependent on the probability of having sufficient energy and not on the precise physical mechanism causing damage. An argument for a log-normal-like failure distribution is also presented. (c) 2005 American Institute of Physics.
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页数:6
相关论文
共 6 条
[1]   An improved model for ultraviolet- and x-ray-induced electron emission from CsI [J].
Boutboul, T ;
Akkerman, A ;
Gibrekhterman, A ;
Breskin, A ;
Chechik, R .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (10) :5841-5849
[2]   ELECTRON INELASTIC MEAN FREE PATHS VERSUS ATTENUATION LENGTHS IN SOLIDS [J].
CHEN, YF ;
KEWI, CM ;
TUNG, CJ .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1992, 25 (02) :262-268
[3]  
EDELSTEIN D, 2001, UNPUB P 2001 IEEE IN
[4]  
Lloyd JR, 2004, MICROELECTRON RELIAB, V44, P1835, DOI 10.1016/j.microrel.2004.07.094
[5]  
*SIA, 2004, 2004 INT TECHN ROADM
[6]  
Stathis J. H., 2001, IEEE Transactions on Device and Materials Reliability, V1, P43, DOI 10.1109/7298.946459