Powder synthesis and ammonothermal crystal growth of GaN from metallic Ga in the presence of NH4I

被引：8

作者：

Bao, Quanxi ^{[1
]}

Sawayama, Hiromi ^{[1
]}

Hashimoto, Takanori ^{[1
]}

Sato, Fukuma ^{[1
]}

Hazu, Kouji ^{[1
]}

Kagamitani, Yuji ^{[2
]}

Ishinabe, Takayuki ^{[2
]}

Saito, Makoto ^{[2
]}

Kayano, Rinzo ^{[3
]}

Tomida, Daisuke ^{[1
]}

Qiao, Kun ^{[1
]}

Chichibu, Shigefusa F. ^{[1
]}

Yokoyama, Chiaki ^{[1
]}

Ishiguro, Tohru ^{[1
]}

机构：

[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Mitsubishi Chem Corp, Ushiku, Ibaraki 3001295, Japan

[3] Japan Steel Works Ltd, Muroran Res Lab, Muroran, Hokkaido 0518505, Japan

来源：

CRYSTENGCOMM | 2012年 / 14卷 / 10期

关键词：

GALLIUM NITRIDE; MINERALIZER; DECOMPOSITION; AMMONIA; EPITAXY; ROUTE;

D O I：

10.1039/c2ce06669f

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

An efficient and mild method to synthesize high-purity hexagonal GaN powder using NH4I as a catalyst was developed. The method makes it possible to use Ga metal for ammonothermal crystal growth of GaN at a rate of 20 mu m per day, which is comparable to its growth rate using polycrystalline GaN grown by hydride vapor phase epitaxy as a nutrient.

引用

页码：3351 / 3354

页数：4

共 22 条

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