Emission Spectrum and Output Efficiency of Exchange Distributed Feedback III-V on Silicon Lasers

被引：1
|
作者：
Duan, Guang-Hua [1 ,2 ]
Leung, Hoi [1 ,2 ]
Lamponi, Marco [1 ,2 ]
机构：
[1] Thales Res & Technol, III V Lab, F-91767 Palaiseau, France
[2] CEA Leti, F-91767 Palaiseau, France
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2012年 / 24卷 / 07期
关键词：
Distributed-feedback lasers; hybrid integrated circuits; silicon-on-insulator technology;
D O I：
10.1109/LPT.2012.2185223
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Exchange-type distributed-feedback (DFB) lasers based on heterogeneous integration of III-V lasers on silicon are analyzed by using a coupled-mode model. We show that such lasers have a similar emission spectrum to their classical counterparts, in which the forward and backward modes have the same transverse profile. We demonstrate that there exists an optimal value for the coupling coefficient, which gives the maximum output slope efficiency in exchange DFB lasers. However, the maximum output efficiency is much lower than that in classical DFB lasers, due to the strong coupling between the two counterpropagating modes.
引用
收藏
页码：611 / 613
页数：3
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