Advances in silicon carbide X-ray detectors

被引：76

作者：

Bertuccio, Giuseppe ^{[1
,2
]}

Caccia, Stefano ^{[1
]}

Puglisi, Donatella ^{[1
,2
]}

Macera, Daniele ^{[1
,2
]}

机构：

[1] Politecn Milan, Dept Elect Engn & Informat Sci, I-22100 Como, Italy

[2] Natl Inst Nucl Phys, INFN Sez, Milan, Italy

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2011年 / 652卷 / 01期

关键词：

Silicon Carbide; Semiconductor radiation detectors; X-ray detectors; X-ray spectroscopy; Low noise electronics; NOISE; NEUTRON;

D O I：

10.1016/j.nima.2010.08.046

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The latest advances in SiC X-ray detectors are presented: a pixel detector coupled to a custom ultra low noise CMOS preamplifier has been characterized at room and high temperature. An equivalent noise energy (ENE) of 113 eV FWHM, corresponding to 6.1 electrons r.m.s., has been achieved with the detector/front-end system operating at +30 degrees C. A Fano factor of F=0.10 has been estimated from the Fe-55 spectrum. When the system is heated up to +100 degrees C, the measured ENE is 163 eV FWHM (8.9 electrons r.m.s.). It is determined that both at room and at high temperature the performance are fully limited by the noise of the front-end electronics. It is also presented the capability of SiC detectors to operate in environments under unstable temperature conditions without any apparatus for temperature stabilization; it has been proved that a SiC detector can acquire high resolution X-ray spectra without spectral line degradation while the system temperature changes between +30 and +75 degrees C. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：193 / 196

页数：4