Preparation and properties of p-type transparent conductive Cu-doped NiO films

被引:132
作者
Chen, S. C. [1 ,2 ]
Kuo, T. Y. [3 ]
Lin, Y. C. [1 ]
Lin, H. C. [2 ,3 ]
机构
[1] Ming Chi Univ Technol, Dept Mat Engn, Taipei 243, Taiwan
[2] Ming Chi Univ Technol, Ctr Thin Film Technol & Applicat, Taipei 243, Taiwan
[3] Natl Taiwan Univ, Inst Mat Sci & Engn, Taipei 106, Taiwan
关键词
Cu-doped NiO films; rf sputtering; Electrical and optical properties;
D O I
10.1016/j.tsf.2011.01.058
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The NiO-Cu composite films with various Cu contents of 0-18.17 at.% are deposited on a glass substrate. An ultra high electrical resistivity (rho) is obtained and cannot be detected by a four point probe measurement when the Cu content in the films is lower than 6.97 at.%. The p value is reduced significantly to 35.8 Omega-cm as Cu content is increased to 9.18 at.%, and it further decreases to 0.02 Omega-cm when the Cu content further increases to 18.17 at.%. The Hall measurement for all Cu-doped NiO films shows p-type conduction. In addition, the transmittance of NiO films also decreases continuously from 96% to 43% as Cu content increases from 0 to 18.17 at.%. The XRD patterns of Cu-doped NiO films show that only NiO peaks appear and the crystallinity of NiO films degrades as Cu content exceeds 6.97 at.%. A large amount of lattice sites of Ni(2+) ions in a NiO crystallite is replaced by the Cu(+) ions that lead to p-type conduction and result in the degradation of crystallinity for NiO-Cu composite films that have a higher Cu content. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:4944 / 4947
页数:4
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