Growth of preferentially-oriented AlN films on amorphous substrate by pulsed laser deposition

被引：22

作者：

Wang, Z. P. ^{[1
]}

Morimoto, A. ^{[2
]}

Kawae, T. ^{[2
]}

Ito, H. ^{[1
]}

Masugata, K. ^{[1
]}

机构：

[1] Toyama Univ, Dept Elect & Elect Syst Engn, Toyama 9308555, Japan

[2] Kanazawa Univ, Grad Sch Nat Sci & Technol, Kanazawa, Ishikawa 9201192, Japan

来源：

PHYSICS LETTERS A | 2011年 / 375卷 / 33期

关键词：

Pulsed laser deposition (PLD); Aluminum nitride (AlN); Nitrogen pressure effects; NITRIDE THIN-FILMS; AIN FILMS; PREFERRED ORIENTATION; ALUMINUM; GAN; MORPHOLOGY; EVOLUTION; ZNO; SI;

D O I：

10.1016/j.physleta.2011.06.043

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Preferentially-oriented aluminum nitride (AlN) films are grown directly on natively-oxidized Si (100) substrate by pulsed laser deposition (PLO) in nitrogen (N-2) environment. The AlN preferential orientation changes from (002) to (100) with increasing N-2 pressure. Such different behaviors are discussed in terms of deposition-rate-dependent preferential orientation, kinetic energy of depositing species and confinement of laser plume. Finally, sample deposited at 0.9 Pa is proved to have the highest (002) peak intensity, the lowest FWHM value, the highest deposition rate and a relatively low RMS roughness (1.138 nm), showing the optimal growth condition for c-axis-oriented AlN growth at this N-2 pressure. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：3007 / 3011

页数：5

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