Growth of preferentially-oriented AlN films on amorphous substrate by pulsed laser deposition

被引：22

作者：

Wang, Z. P. ^{[1
]}

Morimoto, A. ^{[2
]}

Kawae, T. ^{[2
]}

Ito, H. ^{[1
]}

Masugata, K. ^{[1
]}

机构：

[1] Toyama Univ, Dept Elect & Elect Syst Engn, Toyama 9308555, Japan

[2] Kanazawa Univ, Grad Sch Nat Sci & Technol, Kanazawa, Ishikawa 9201192, Japan

来源：

PHYSICS LETTERS A | 2011年 / 375卷 / 33期

关键词：

Pulsed laser deposition (PLD); Aluminum nitride (AlN); Nitrogen pressure effects; NITRIDE THIN-FILMS; AIN FILMS; PREFERRED ORIENTATION; ALUMINUM; GAN; MORPHOLOGY; EVOLUTION; ZNO; SI;

D O I：

10.1016/j.physleta.2011.06.043

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Preferentially-oriented aluminum nitride (AlN) films are grown directly on natively-oxidized Si (100) substrate by pulsed laser deposition (PLO) in nitrogen (N-2) environment. The AlN preferential orientation changes from (002) to (100) with increasing N-2 pressure. Such different behaviors are discussed in terms of deposition-rate-dependent preferential orientation, kinetic energy of depositing species and confinement of laser plume. Finally, sample deposited at 0.9 Pa is proved to have the highest (002) peak intensity, the lowest FWHM value, the highest deposition rate and a relatively low RMS roughness (1.138 nm), showing the optimal growth condition for c-axis-oriented AlN growth at this N-2 pressure. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：3007 / 3011

页数：5

共 34 条

[1] Modelling of SAW filter based on ZnO/diamond/Si layered structure including velocity dispersion
Assouar, MB
Elmazria, O
Riobóo, RJ
Sarry, F
Alnot, P
[J]. APPLIED SURFACE SCIENCE, 2000, 164 : 200 - 204
[2] Surface acoustic wave devices based on AlN/sapphire structure for high temperature applications
Aubert, Thierry
Elmazria, Omar
Assouar, Badreddine
Bouvot, Laurent
Oudich, Mourad
[J]. APPLIED PHYSICS LETTERS, 2010, 96 (20)
[3] Lateral-field-excited thin-film Lamb wave resonator -: art. no. 154103
Bjurström, J
Katardjiev, I
Yantchev, V
[J]. APPLIED PHYSICS LETTERS, 2005, 86 (15) : 1 - 3
[4] CALIENDO C, 2003, APPL PHYS LETT, V83, P8
[5] Comparative study of the elastic properties of polycrystalline aluminum nitride films on silicon by Brillouin light scattering
Carlotti, G
Gubbiotti, G
Hickernell, FS
Liaw, HM
Socino, G
[J]. THIN SOLID FILMS, 1997, 310 (1-2) : 34 - 38
[6] The evolution of preferred orientation and morphology of AIN films under various RF sputtering powers
Cheng, H
Hing, P
[J]. SURFACE & COATINGS TECHNOLOGY, 2003, 167 (2-3) : 297 - 301
[7] AIN films deposited under various nitrogen concentrations by RF reactive sputtering
Cheng, H
Sun, Y
Zhang, JX
Zhang, YB
Yuan, S
Hing, P
[J]. JOURNAL OF CRYSTAL GROWTH, 2003, 254 (1-2) : 46 - 54
[8] Deposition characterization of reactive magnetron sputtered aluminum nitride thin films for film bulk acoustic wave resonator
Chiu, Kuan-Hsun
Chen, Jiann-Heng
Chenc, Hong-Ren
Huang, Ruey-Shing
[J]. THIN SOLID FILMS, 2007, 515 (11) : 4819 - 4825
[9] Chrisey D. B., 1994, Pulsed Laser Deposition of Thin Films
[10] THE LOW-TEMPERATURE CATALYZED CHEMICAL VAPOR-DEPOSITION AND CHARACTERIZATION OF ALUMINUM NITRIDE THIN-FILMS
DUPUIE, JL
GULARI, E
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (01): : 18 - 28

← 1 2 3 4 →