Spin-dependent giant junction magnetoresistance in simple Fe/p-Si(001) Schottky heretrojunction at low temperature

被引：4

作者：

Sarkar, Anirban ^{[1
,2
]}

Adhikari, Rajdeep ^{[1
,3
]}

Das, Amal Kumar ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Phys, Kharagpur 721302, W Bengal, India

[2] Forschungszentrum Julich, Quantum Mat & Collect Phenomena JCNS 2 PGI 4, D-52425 Julich, Germany

[3] Johannes Kepler Univ Linz, Inst Halbleiter & Festkorperphys, A-4040 Linz, Austria

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2019年 / 125卷 / 01期

关键词：

THIN-FILM; GAAS; BREAKDOWN;

D O I：

10.1007/s00339-018-2360-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the giant junction magnetoresistance observed at low temperature in Fe/p-Si Schottky heterojunction. The device shows good rectifying characteristics at room temperature and a dualSchottky as well as magnetic diodecharacteristics at low temperature, below 50K. Formation of a magnetic field-dependent potential barrier due to electrical injection of spin-polarized carriers from the ferromagnetic electrode into the semiconductor is speculated to result in such large junction resistance. The magnetoresistance value is of the order of 104% at 10K and saturates at approximate to 0.5>kOe, showing dual functionalityworking as a magnetic diode as well as a magnetoresistive element.

引用

页数：9