Structural Properties of Silicon Carbide Nano Structures Grown on Quartz Substrate Using CVD Method

被引：2
|
作者：
Mahmoodi, A. [1 ]
Ghoranneviss, M. [1 ]
Mehrani, Kh [1 ]
机构：
[1] Islamic Azad Univ, Sci & Res Branch, Plasma Phys Res Ctr, POB 14665-678, Tehran, Iran
来源：
THEORETICAL AND EXPERIMENTAL CHEMISTRY | 2016年 / 52卷 / 04期
关键词：
silicon carbide (SiC); nanostructures; nanomaterial; THIN-FILMS; ION-BEAM; H FILMS; A-CH; NANOWIRES; COMPOSITE; SURFACE; NPS;
D O I：
10.1007/s11237-016-9477-3
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Silicon carbide (SiC) nanostructures were obtained by the chemical deposition of hexamethyldisiloxane (C6H18OSi2) from the vapor phase onto quartz with a supported cobalt catalyst. A study was carried out on the structural and optical properties of the SiC nanostructures obtained at 650, 700, 750, and 800 A degrees C using scanning electron microscopy, XRD, and electron spectroscopy. All the films were found to have crystalline structure. The optical transmittance in the visible region increases with increasing synthesis temperature.
引用
收藏
页码：259 / 264
页数：6
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