Evaluation method of optical index of Ta and Ta-based absorber for EUV mask using extreme ultraviolet reflectometer

被引：0
|
作者：
Hosoya, Morio [1 ]
Sakaya, Noriyuki [1 ]
Nozawa, Osamu [1 ]
Hamamoto, Kazuo [1 ]
Nagarekawa, Osamu [1 ]
Watanabe, Takeo [2 ]
Kinoshita, Hiroo [2 ]
机构：
[1] HOYA Co, R&D Ctr, R&D Ctr Bldg,3-3-1 Musashino, Tokyo 1968510, Japan
[2] Univ Hyogo, Lab Adv Sci & Technol Ind, Ako, Hyogo 6781205, Japan
来源：
MICROPROCESSES AND NANOTECHNOLOGY 2007, DIGEST OF PAPERS | 2007年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：528 / +
页数：2
相关论文
共 13 条
  • [1] Evaluating the optical index of Ta and Ta-based absorbers for an extreme ultraviolet mask using extreme ultraviolet reflectometry
    Hosoya, Morio
    Sakaya, Noriyuki
    Nozawa, Osamu
    Shiota, Yuki
    Hamamoto, Kazuo
    Nagarekawa, Osamu
    Shimojima, Shoji
    Shoki, Tsutomu
    Watanabe, Takeo
    Kinoshita, Hiroo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (06) : 4898 - 4905
  • [2] Evaluating the optical index of Ta and Ta-based absorbers i for an extreme ultraviolet mask using extreme ultraviolet reflectometry
    Hosoya, Morio
    Sakaya, Noriyuki
    Nozawa, Osamu
    Shiota, Yuki
    Hamamoto, Kazuo
    Nagarekawa, Osamu
    Shimojima, Shoji
    Shoki, Tsutomu
    Watanabe, Takeo
    Kinoshita, Hiroo
    Japanese Journal of Applied Physics, 2008, 47 (6 PART 2): : 4898 - 4905
  • [3] Extreme ultraviolet lithography mask patterning and printability studies with a Ta-based absorber
    Mangat, PJS
    Hector, SD
    Thompson, MA
    Dauksher, WJ
    Cobb, J
    Cummings, KD
    Mancini, DP
    Resnick, DJ
    Cardinale, G
    Henderson, C
    Kearney, P
    Wedowski, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06): : 3029 - 3033
  • [4] Fabrication of Ta based absorber EUV mask with SRAF
    Morishita, Keiko
    Takai, Kosuke
    Masui, Kenji
    Kamo, Takashi
    Abe, Tsukasa
    Morikawa, Yasutaka
    Hayashi, Naoya
    PHOTOMASK JAPAN 2018: XXV SYMPOSIUM ON PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY, 2018, 10807
  • [5] Wet cleaning of Ta-based extreme ultraviolet photomasks at room temperature
    Park, Jehwan
    Choi, Woong
    Kim, Jihyun
    NANOTECHNOLOGY, 2024, 35 (20)
  • [6] Contrast measurement of reflection mask with Cr and Ta absorber for extreme ultraviolet lithography
    Niibe, M
    Watanabe, T
    Nii, H
    Tanaka, T
    Kinoshita, H
    MICROPROCESSES AND NANOTECHNOLOGY 2000, DIGEST OF PAPERS, 2000, : 288 - 289
  • [7] Evaluation of Ta-Co alloys as novel high-k extreme ultraviolet mask absorber
    Thakare, Devesh
    Wu, Meiyi
    Opsomer, Karl
    Saadeh, Qais
    Soltwisch, Victor
    Naujok, Philipp
    Detavernier, Christophe
    Dattilo, Davide
    Foltin, Markus
    Goodyear, Andy
    Cooke, Mike
    Delabie, Annelies
    Philipsen, Vicky
    JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3, 2023, 22 (02):
  • [8] Evaluation of Ta-Co alloys as novel high-k EUV mask absorber
    Thakare, Devesh
    Wu, Meiyi
    Opsomer, Karl
    Detavernier, Christophe
    Naujok, Philipp
    Saadeh, Qais
    Soltwisch, Victor
    Delabie, Annelies
    Philipsen, Vicky
    OPTICAL AND EUV NANOLITHOGRAPHY XXXV, 2022, 12051
  • [9] Interaction between aberrations and mask 3D effects for low-n and Ta-based absorbers in extreme ultraviolet lithography
    van Lare, M. -Claire
    Finders, Jo
    van Rhee, Tasja
    JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3, 2023, 22 (02):
  • [10] Evaluation of extreme-ultraviolet lithography mask absorber pattern on multilayer phase defect using extreme-ultraviolet microscope
    Hamamoto, K.
    Sakaya, N.
    Hosoya, M.
    Kureishi, M.
    Ohkubo, R.
    Shoki, T.
    Nagarekawa, O.
    Kishimoto, J.
    Watanabe, T.
    Kinoshita, H.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (04): : 1938 - 1942
12