160°C pulsed laser operation of AlGalnP-based vertical-cavity surface-emitting lasers

被引：4

作者：

Rossbach, R ^{[1
]}

Butendeich, R ^{[1
]}

Ballmann, T ^{[1
]}

Raabe, B ^{[1
]}

Jetter, M ^{[1
]}

Schweizer, H ^{[1
]}

Scholz, E ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Phys 4, D-70550 Stuttgart, Germany

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 23期

关键词：

D O I：

10.1049/el:20031040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pulsed lasing operation of a 670 mn AlGaInP-based oxide-confined vertical-cavity surface-emitting laser (VCSEL) at high temperatures is demonstrated. At +120degreesC heatsink temperature output power exceeded 0.5 mW and at +160degreesC 25 muW output power was achieved.

引用

页码：1654 / 1655

页数：2

共 4 条

[1] 80°C continuous wave operation of AIGaInP based visible VCSEL [J].

Calvert, T ;

Corbett, B ;

Lambkin, JD .

ELECTRONICS LETTERS, 2002, 38 (05) :222-223

[2] High-performance vertical-cavity surface-emitting lasers with emission wavelength between 650 and 670 nm [J].

Knigge, A ;

Zorn, M ;

Weyers, M ;

Tränkle, G .

ELECTRONICS LETTERS, 2002, 38 (16) :882-883

[3] High efficiency AlGaInP-based 650 nm vertical-cavity surface-emitting lasers [J].

Knigge, A ;

Zorn, M ;

Wenzel, H ;

Weyers, M ;

Tränkle, G .

ELECTRONICS LETTERS, 2001, 37 (20) :1222-1223

[4]

Sale TE, 2000, 2000 IEEE 17TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST, P15, DOI 10.1109/ISLC.2000.882266

← 1 →