Structural, optical, and luminescence properties of ZnO:Ga optical scintillation ceramic

被引：16

作者：

Gorokhova, E., I ^{[1
]}

Eron'ko, S. B. ^{[1
]}

Oreshchenko, E. A. ^{[1
]}

Sandulenko, A., V ^{[1
]}

Rodnyi, P. A. ^{[2
]}

Chernenko, K. A. ^{[2
,3
]}

Venevtsev, I. D. ^{[2
]}

Kul'kov, A. M. ^{[4
]}

Muktepavela, Faina ^{[5
]}

Boutachkov, Plamen ^{[6
]}

机构：

[1] SI Vavilov State Opt Inst Sci Prod Enterprise, St Petersburg, Russia

[2] Peter Great St Petersburg Polytech Univ, St Petersburg, Russia

[3] Lund Univ, MAX IV Lab, POB 118, SE-22100 Lund, Sweden

[4] St Petersburg State Univ, St Petersburg, Russia

[5] Univ Latvia, Inst Solid State Phys, Riga, Latvia

[6] GSI Helmholtzzentrum Schwerionenforsch GmbH, Darmstadt, Germany

来源：

JOURNAL OF OPTICAL TECHNOLOGY | 2018年 / 85卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

GA; MORPHOLOGY; CRYSTALS; GROWTH; FILMS;

D O I：

10.1364/JOT.85.000729

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

This paper discusses the characteristics of ZnO and ZnO:Ga ceramics fabricated by uniaxial hot pressing. The short-wavelength transmission limit of zinc oxide ceramics is in the 370-nm region; the long-wavelength limit is determined by the free-charge-carrier concentration and lies in the interval from 5 to 9 mu m. The total transmittance of such ceramics in the visible and near-IR regions is about 70% when the sample is 0.5 mm thick. The luminescence spectrum is represented by a broad emission band with maximum at 580 nm, having a defect nature. The introduction of 0.03-0.1 mass % gallium into the zinc oxide structure inhibits grain growth and increases the free-charge-carrier concentration to 3.44 x 10(19) cm(-3). As the gallium concentration increases in the range 0.05-0.1 mass % in a ceramic of composition ZnO:Ga, the defect luminescence band is suppressed and a characteristic exciton luminescence is formed with a maximum corresponding to 389 nm and a damping time constant of 1.1 ns. (C) 2018 Optical Society of America

引用

页码：729 / 737

页数：9

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