Tunable oxide-bypassed trench gate MOSFET: Breaking the ideal superjunction MOSFET performance line at equal column width

被引：30

作者：

Yang, X ^{[1
]}

Liang, YC

Samudra, GS

Liu, Y

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore

[2] Inst Microelect, Singapore 117684, Singapore

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 11期

关键词：

breakdown voltage; ideal silicon limit; ideal superjunction limit; power superjunction MOSFET; specific on-resistance;

D O I：

10.1109/LED.2003.819268

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The superjunction (SJ) MOSFET power device is highly recognized for its higher blocking capability and lower on-state resistance that breaks the conventional unipolar silicon limit. However, SJ devices below 100 V rating incur constraint of unrealistic narrower column widths [11, [21 and their performance is greatly handicapped due to difficulties in formation of perfect charge-balanced SJ p-n columns by current process technology. Based on the alternative approach of tunable oxide-bypassed JOB) SJ MOSFET concept proposed in [15], a TOB-UMOS device of 79 V rating has been successfully fabricated for the first time. Laboratory measurements indicate that the device has broken the ideal SJ MOSFET performance line at equal column width of 3.5 mum, and potentially the ideal silicon limit as well.

引用

页码：704 / 706

页数：3

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