Molecular-beam epitaxial growth of ZnMgCdS layers and their application to UV-A photodetectors

被引：10

作者：

Enami, M ^{[1
]}

Tsutsumi, K ^{[1
]}

Hirose, F ^{[1
]}

Katsuta, S ^{[1
]}

Kobayashi, M ^{[1
]}

机构：

[1] Waseda Univ, Kagami Mem Lab Mat Sci & Engn, Shinjuku Ku, Tokyo 1690051, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 9AB期

关键词：

ZnMgCdS; molecular beam epitaxy; photoluminescence; UV-A detector; spectral response;

D O I：

10.1143/JJAP.42.L1047

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zincblende ZnMgCdS quaternary alloy layers were grown by molecular-beam epitaxy. The ZnMgCdS alloy lattice matched with GaAs and exhibited the band-gap energy of approximately 3 eV. Zn, Mg, and CDs were used as source materials. Cd was replaced by Zn or Mg, and the alloy composition was controlled when the growth temperature was set to approximately 210degreesC. Low-temperature photoluminescence showed dominant band-edge features indicating the high quality of the epilayer. The epilayer was applied to the metal-semiconductor-metal photodetector, and visible-blind UV sensing characteristics were observed.

引用

页码：L1047 / L1049

页数：3

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