Facet roughness analysis for InGaN/GaN lasers with cleaved facets

被引：43

作者：

Stocker, DA ^{[1
]}

Schubert, EF

Grieshaber, W

Boutros, KS

Redwing, JM

机构：

[1] Boston Univ, Ctr Photon Res, Boston, MA 02215 USA

[2] Epitron Adv Technol Mat Inc, Danbury, CT 06810 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 14期

关键词：

D O I：

10.1063/1.122172

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic force microscope images reveal a root-mean-square roughness Delta d = 16 nm for InGaN/GaN double-heterostructure laser structures with cleaved a-plane facets. The c-plane sapphire substrate cleaves cleanly along both the a and m planes. A theoretical model is developed which shows that the power reflectivity of the facets decreases with roughness by a factor of e(-16 pi 2(n Delta d/lambda 0)2), where n is the refractive index of the semiconductor and lambda(0) is the emission wavelength. Laser emission from the optically pumped cavities shows a TE/TM ratio of 100, an increase in differential quantum efficiency by a factor of 34 above threshold, and an emission line narrowing to 13.5 meV. (C) 1998 American Institute of Physics. [S0003- 6951(98)00340-4].

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页码：1925 / 1927

页数：3

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