Dynamics of Anderson localization in disordered wires

被引:1
|
作者
Khalaf, E. [1 ]
Ostrovsky, P. M. [1 ,2 ]
机构
[1] Max Planck Inst Solid State Res, Heisenbergstr 1, D-70569 Stuttgart, Germany
[2] RAS, LD Landau Inst Theoret Phys, Chernogolovka 142432, Russia
基金
俄罗斯科学基金会;
关键词
TIME-ORDER CORRELATION; TOPOLOGICAL INSULATORS; FOURIER-ANALYSIS; ELECTRON-SYSTEM; ENERGY-LEVELS; EDGE STATES; QUANTUM; DIFFUSION; PARTICLE; EIGENFUNCTIONS;
D O I
10.1103/PhysRevB.96.201105
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We consider the dynamics of an electron in an infinite disordered metallic wire. We derive exact expressions for the probability of diffusive return to the starting point in a given time. The result is valid for wires with or without time-reversal symmetry and allows for the possibility of topologically protected conducting channels. In the absence of protected channels, Anderson localization leads to a nonzero limiting value of the return probability at long times, which is approached as a negative power of time with an exponent depending on the symmetry class. When topologically protected channels are present (in a wire of either unitary or symplectic symmetry), the probability of return decays to zero at long time as a power law whose exponent depends on the number of protected channels. Technically, we describe the electron dynamics by the one-dimensional supersymmetric nonlinear sigma model. We derive an exact identity that relates any local dynamical correlation function in a disordered wire of unitary, orthogonal, or symplectic symmetry to a certain expectation value in the random matrix ensemble of class AIII, CI, or DIII, respectively. The established exact mapping from a one-to a zero-dimensional sigma model is very general and can be used to compute any local observable in a disordered wire.
引用
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页数:6
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