Negative Capacitance FETs with Steep Switching by Ferroelectric Hf-based Oxide

被引：0

作者：

Lee, M. H. ^{[1
]}

Chen, P. -G. ^{[1
,2
]}

Fan, S. -T. ^{[3
]}

Kuo, C. -Y. ^{[1
]}

Chen, H. -H. ^{[1
]}

Gu, S. -S. ^{[1
]}

Chou, Y. -C. ^{[1
]}

Tang, C. -H. ^{[1
]}

Hong, R. -C. ^{[1
]}

Wang, Z. -Y. ^{[1
]}

Liao, M. -H. ^{[2
]}

Li, K. -S. ^{[4
]}

Chen, M. -C. ^{[4
]}

Liu, C. W. ^{[3
]}

机构：

[1] Natl Taiwan Normal Univ, Inst Electroopt Sci & Technol, Taipei, Taiwan

[2] Natl Taiwan Univ, Dept Mech Engn, Taipei, Taiwan

[3] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei, Taiwan

[4] Natl Nano Device Labs, Hsinchu, Taiwan

来源：

2017 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm after annealing 800 degrees C for subthreshold swing (SS) < 60 mV/dec and hysteresis free. The relation between SS and FE-HZO thickness is also discussed. The NC-FinFET modeling is validated on standard 14nm FinFET. The feasible concept of coupling the polarization Hf-based oxide was applied, which were experimentally established with the validity of the negative capacitance effect.

引用

页数：2

共 50 条

[21] Investigation of scintillation properties of Hf-based oxide materials
Fukushima, Hiroyuki
Nakauchi, Daisuke
Kato, Takumi
Kawaguchi, Noriaki
Yanagida, Takayuki
JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (01)
[22] Photoconductivity of Hf-based binary metal oxide systems
Shamuilia, S.
Afanas'ev, V. V.
Stesmans, A.
McCarthy, I.
Campbell, S. A.
Boutchich, M.
Roeckerath, M.
Heeg, T.
Lopes, J. M. J.
Schubert, J.
JOURNAL OF APPLIED PHYSICS, 2008, 104 (11)
[23] Dynamics of Negative Capacitance induced by Ferroelectric Switching in Ferroelectric-Resistor Circuit
Dong, Yulong
Chen, Danyang
Zhong, Ni
Liu, Jingquan
Duan, Chungang
Li, Xiuyan
2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM), 2021,
[24] Ferroelectric Switching Delay as Cause of Negative Capacitance and the Implications to NCFETs
Obradovic, B.
Rakshit, T.
Hatcher, R.
Kittl, J. A.
Rodder, M. S.
2018 IEEE SYMPOSIUM ON VLSI TECHNOLOGY, 2018, : 51 - 52
[25] Enhanced transient negative capacitance during inhomogeneous ferroelectric switching
Xu, Bin
Prosandeev, Sergey
Paillard, Charles
Bellaiche, L.
PHYSICAL REVIEW B, 2020, 101 (18)
[26] Switching On/Off Negative Capacitance in Ultrathin Ferroelectric/Dielectric Capacitors
Acharya, Jagaran
Goul, Ryan
Wilt, Jamie
Wu, Judy
ACS APPLIED MATERIALS & INTERFACES, 2020, 12 (08) : 9902 - 9908
[27] Multi-Domain Ferroelectric FETs with Negative and Enhanced Positive Capacitance for Logic Applications
Saha, Atanu K.
Gupta, Sumeet K.
2021 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2021), 2021, : 77 - 80
[28] Effects of Temperature on the Performance of Hf0.5Zr0.5O2-Based Negative Capacitance FETs
Wang, Chengxu
Wu, Jibao
Yu, Hao
Han, Genquan
Miao, Xiangshui
Wang, Xingsheng
IEEE ELECTRON DEVICE LETTERS, 2020, 41 (11) : 1625 - 1628
[29] The impact of charges at the dielectric/channel interface on performance degradation in negative capacitance ferroelectric FETs
Li, Ming-Hao
Li, Qiang
Hsu, Hsiao-Hsuan
Ying, Lei-Ying
Zhang, Bao-Ping
Zheng, Zhi-Wei
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2023, 38 (04)
[30] Analytical Calculation of Influence of Ferroelectric Properties on Electrical Characteristics Negative Capacitance Germanium FETs
Peng, Yue
Han, Genquan
Chen, Zhibin
Li, Qinglong
Zhang, Jincheng
Hao, Yue
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2018, 6 (01): : 233 - 239

← 1 2 3 4 5 →