Assessing out-of-band flare effects at the wafer level for EUV lithography

被引：14

作者：

George, Simi A. ^{[1
]}

Naulleau, Patrick P. ^{[1
]}

Kemp, Charles D. ^{[1
]}

Denham, Paul E. ^{[1
]}

Rekawa, Senajith ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Ctr Xray Opt, Berkeley, CA 94720 USA

来源：

EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY | 2010年 / 7636卷

关键词：

EUVL; out-of-band; resists; flare; blur on patterns; aerial image modeling;

D O I：

10.1117/12.847953

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

To accurately estimate the flare contribution from the out-of-band (OOB), the integration of a DUV source into the SEMATECH Berkeley 0.3-NA Micro-field Exposure tool is proposed, enabling precisely controlled exposures along with the EUV patterning of resists in vacuum. First measurements evaluating the impact of bandwidth selected exposures with a table-top set-up and subsequent EUV patterning show significant impact on line-edge roughness and process performance. We outline a simulation-based method for computing the effective flare from resist sensitive wavelengths as a function of mask pattern types and sizes. This simulation method is benchmarked against measured OOB flare measurements and the results obtained are in agreement.

引用

页数：10

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