Assessing out-of-band flare effects at the wafer level for EUV lithography

被引：14
作者：
George, Simi A. [1 ]
Naulleau, Patrick P. [1 ]
Kemp, Charles D. [1 ]
Denham, Paul E. [1 ]
Rekawa, Senajith [1 ]
机构：
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Ctr Xray Opt, Berkeley, CA 94720 USA
来源：
EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY | 2010年 / 7636卷
关键词：
EUVL; out-of-band; resists; flare; blur on patterns; aerial image modeling;
D O I：
10.1117/12.847953
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
To accurately estimate the flare contribution from the out-of-band (OOB), the integration of a DUV source into the SEMATECH Berkeley 0.3-NA Micro-field Exposure tool is proposed, enabling precisely controlled exposures along with the EUV patterning of resists in vacuum. First measurements evaluating the impact of bandwidth selected exposures with a table-top set-up and subsequent EUV patterning show significant impact on line-edge roughness and process performance. We outline a simulation-based method for computing the effective flare from resist sensitive wavelengths as a function of mask pattern types and sizes. This simulation method is benchmarked against measured OOB flare measurements and the results obtained are in agreement.
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页数：10
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