Defects in (111) 3C-SiC layers grown at different temperatures by VLS and CVD on 6H-SiC substrates

被引：0

作者：

Marinova, Maya ^{[1
]}

Jegenyes, Nikoletta ^{[2
]}

Andreadou, Ariadne ^{[1
]}

Mantzari, Alkyoni ^{[1
]}

Lorenzzi, Jean ^{[2
]}

Ferro, Gabriel ^{[2
]}

Polychroniadis, Efstathios K. ^{[1
]}

机构：

[1] Aristotle Univ Thessaloniki, Dept Phys, GR-54124 Thessaloniki, Greece

[2] Univ Lyon 1, Lab Multimat Interfaces, CNRS, USB, F-191869622 Villeurbanne, France

来源：

2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES | 2010年 / 1292卷

关键词：

CVD; VLS; 3C-SiC; stacking faults; twins; TEM;

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In the present work homoepitaxial (111) 3C-SiC layers, grown by Chemical Vapour Deposition (CVD) on top of 3C-SiC seeds grown by the Vapour Liquid Solid (VLS) mechanism on Si-face on-axis (0001) 6H-SiC substrates, are investigated by means of Transmission Electron Microscopy (TEM). The CVD process was performed at constant C/Si ratio and the growth temperature was varied from 1450 degrees C to 1650 degrees C. The main defects in the VLS seeds which are directly nucleated on the interface with the 6H-SiC substrate are microtwins, dislocations and stacking faults (SFs). Within the CVD layers, the main defects appearing are also SFs together with multiple twin complexes which consist of two Sigma 3 and one Sigma 9 boundaries. Systematic analysis revealed that the multiple twin complexes disappear with increasing temperature while the trend for SF's is more difficult to follow. Some 3C to 6H polytypic transformation was found to occur at CVD growth temperature above 1550 degrees C.

引用

页码：95 / +

页数：2

共 6 条

[1] Toward an ideal Schottky barrier on 3C-SiC [J].

Eriksson, Jens ;

Weng, Ming Hung ;

Roccaforte, Fabrizio ;

Giannazzo, Filippo ;

Leone, Stefano ;

Raineri, Vito .

APPLIED PHYSICS LETTERS, 2009, 95 (08)

[2] Investigation of 3C-SiC(111) homoepitaxial growth by CVD at high temperature [J].

Jegenyes, N. ;

Lorenzzi, J. ;

Souliere, V. ;

Dazord, J. ;

Cauwet, F. ;

Ferro, G. .

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 :127-130

[3] Low doped 3C-SiC layers deposited by the Vapour-Liquid-Solid mechanism on 6H-SiC substrates [J].

Lorenzzi, J. ;

Zoulis, G. ;

Kim-Hak, O. ;

Jegenyes, N. ;

Carole, D. ;

Cauwet, F. ;

Juillaguet, S. ;

Ferro, G. ;

Camassel, J. .

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 :171-+

[4] Reducing planar defects in 3C-SiC [J].

Nagasawa, Hiroyuki ;

Yagi, Kuniaki ;

Kawahara, Takamitsu ;

Hatta, Naoki .

CHEMICAL VAPOR DEPOSITION, 2006, 12 (8-9) :502-508

[5] CVD growth of 3C-SiC on 4H/6H mesas [J].

Neudeck, Philip G. ;

Trunek, Andrew J. ;

Spry, David J. ;

Powell, J. Anthony ;

Du, Hui ;

Skowronski, Marek ;

Huang, Xian Rong ;

Dudley, Michael .

CHEMICAL VAPOR DEPOSITION, 2006, 12 (8-9) :531-540

[6] Fabrication and characterization of 3C-SiC-based MOSFETs [J].

Schoener, Adolf ;

Krieger, Michael ;

Pensl, Gerhard ;

Abe, Masayuki ;

Nagasawa, Hiroyuki .

CHEMICAL VAPOR DEPOSITION, 2006, 12 (8-9) :523-530

← 1 →