CuSbS2-Sensitized Inorganic-Organic Heterojunction Solar Cells Fabricated Using a Metal-Thiourea Complex Solution

The device performance of sensitizer-architecture solar cells based on a CuSbS2 light sensitizer is presented. The device consists of F-doped SnO2 substrate/TiO2 blocking layer/mesoporous TiO2/CuSbS2/hole-transporting material/Au electrode. The CuSbS2 was deposited by repeated cycles of spin coating of a Cu-Sb-thiourea complex solution and thermal decomposition, followed by annealing in Ar at 500 degrees C. Poly-(2,6-(4,4-bis-(2-ethylhexyl)-4H-cyclopenta[ 2,1-b; 3,4-b']dithio-phene)-alt-4,7(2,1,3-benzothiadiazole)) (PCPDTBT) was used as the hole-transporting material. The best-performing cell exhibited a 3.1% device efficiency, with a short-circuit current density of 21.5 mA cm(-2), an open-circuit voltage of 304 mV, and a fill factor of 46.8%.