Coulomb drag near the metal-insulator transition in two dimensions

被引：20

作者：

Pillarisetty, R ^{[1
]}

Noh, H

Tutuc, E

De Poortere, EP

Lai, K

Tsui, DC

Shayegan, M

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Sejong Univ, Dept Phys, Seoul 143747, South Korea

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.71.115307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the drag resistivity between dilute two-dimensional hole systems, near the apparent metal-insulator transition. We find the deviations from the T-2 dependence of the drag to be independent of layer spacing and correlated with the metalliclike behavior in the single-layer resistivity, suggesting they both arise from the same origin. In addition, layer-spacing dependence measurements suggest that while the screening properties of the system remain relatively independent of temperature, they weaken significantly as the carrier density is reduced. Finally, we demonstrate that the drag itself significantly enhances the metallic T dependence in the single-layer resistivity.

引用

页数：5

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