Anisotropic Carrier Transport in n-Doped 6H-SiC

被引：1
|
作者：
Ferracioli, R. T. [1 ]
Rodrigues, C. G. [1 ]
Luzzi, R. [2 ]
机构：
[1] Pontifical Catholic Univ, Sch Exact Sci & Comp, Goiania, Go, Brazil
[2] Inst Phys Gleb Wataghin, Condensed Matter Phys Dept, Campinas, Brazil
来源：
PHYSICS OF THE SOLID STATE | 2020年 / 62卷 / 01期
关键词：
NONEQUILIBRIUM; SEMICONDUCTORS; SCATTERING; MOBILITY;
D O I：
10.1134/S1063783420010102
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this paper, a study is presented on the charge transport in n-type doped semiconductor 6H-SiC (in both transient and steady state) using a nonequilibrium quantum kinetic theory derived from the method of nonequilibrium statistical operator (NSO), which furnishes a clear description of the irreversible phenomena that occur in the evolution of the analyzed system. We obtain theoretically the dependence on the electric field (applied in the orientation perpendicular or parallel to the c-axis) of the basic macrovariables: the "electron drift velocity" and the "nonequilibrium temperature." The "peak points" in time evolution of this macrovariables are derived and analyzed.
引用
收藏
页码：110 / 115
页数：6
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