Noncontact In-Line Monitoring of Ge Content and Thickness Variations of Epitaxial Si1-xGex Layers on Si(100) Using Polychromator-Based Multiwavelength Micro-Raman Spectroscopy

被引：19

作者：

Tzeng, Yu Fen ^{[1
]}

Ku, Scott ^{[1
]}

Chang, Stock ^{[1
]}

Yang, Chi Ming ^{[1
]}

Chern, Chyi Shieng ^{[1
]}

Lin, John ^{[1
]}

Hasuike, Noriyuki ^{[2
]}

Harima, Hiroshi ^{[2
]}

Ueda, Takeshi ^{[3
]}

Ishigaki, Toshikazu ^{[3
]}

Kang, Kitaek ^{[3
]}

Yoo, Woo Sik ^{[3
]}

机构：

[1] Taiwan Semicond Mfg Co Ltd, Hsinchu 30077, Taiwan

[2] Kyoto Inst Technol, Kyoto 6068585, Japan

[3] WaferMasters Inc, San Jose, CA 95112 USA

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 10期

关键词：

SCATTERING; SI;

D O I：

10.1143/APEX.3.106601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ge content and thickness variations of epitaxial Si1-xGex layers on Si(100) were nondestructively measured using a long-focal-length, polychromator-based, multiwavelength micro-Raman spectroscopy system, which is designed for noncontact, in-line process and material property monitoring. The Ge content and thickness variations measured using the Raman system showed good agreement with results from both high-resolution X-ray diffraction (HRXRD) and secondary ion mass spectroscopy (SIMS) analysis. The nondestructive depth profiling capability of the multiwavelength Raman spectroscopy was verified on Si1-xGex layers on Si(100) intentionally profiled with a Ge content gradient. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

共 15 条

[11] Non-destructive Characterization of Ge Content and Ge Depth Profile Variations in Si1-xGex/Si by Multi-wavelength Raman Spectroscopy [J].