Chemical Mechanical Polishing of Ruthenium in Salicylic Acid System Slurry

被引：0

作者：

Wang Jie ^{[1
]}

Chu Xiangfeng ^{[1
]}

Doug Yongping ^{[1
]}

Bai Linshan ^{[1
]}

Ye Mingfu ^{[1
]}

Sun Wenqi ^{[1
]}

机构：

[1] Anhui Univ Technol, Maanshan 243002, Peoples R China

来源：

RARE METAL MATERIALS AND ENGINEERING | 2014年 / 43卷 / 12期

关键词：

ruthenium; chemical mechanical planarization; salicylic acid; RU; FILMS; CMP;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of concentrations of hydrogen peroxide (H2O2) and salicylic acid (SA) on the material removal rate (MRR) in slurries was investigated. The influence of H2O2 and SA on the corrosion behavior was studied by electrochemical methods and X-ray photoelectron spectroscopy.(XPS). The surface roughness of the polished Ru disk was characterized by atomic force microscopy (AFM). The results show that the increase of SA promotes formation of passive film, and increases the MRR of Ru. MRR increases with the increasing of H2O2 at the beginning, but it would decrease when the concentration of H2O2 is higher than 3%. The surface roughness R-a of the polished Ru surface could reach 7.2 nm.

引用

页码：3120 / 3123

页数：4

共 14 条

[1] Preparation of Ru thin film layer on Si and TaN/Si as diffusion barrier by plasma enhanced atomic layer deposition
Choi, Bum Ho
Lim, Yong Hwan
Lee, Jong Ho
Kim, Young Baek
Lee, Ho-Nyun
Lee, Hong Kee
[J]. MICROELECTRONIC ENGINEERING, 2010, 87 (5-8) : 1391 - 1395
[2] [储向峰 Chu Xiangfeng], 2012, [摩擦学学报, Tribology], V32, P421
[3] Chu XF, 2012, RARE METAL MAT ENG, V41, P585
[4] Kang SY, 2000, J KOREAN PHYS SOC, V37, P1040, DOI 10.3938/jkps.37.1040
[5] Effect of pH in Ru Slurry with Sodium Periodate on Ru CMP
Kim, In-Kwon
Cho, Byoung-Gwun
Park, Jin-Goo
Park, Jum-Yong
Park, Hyung-Soon
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (03) : H188 - H192
[6] Development of novel process for RuCMP using ceric ammonium nitrate (CAN)-containing nitric acid
Lee, WJ
Park, HS
[J]. APPLIED SURFACE SCIENCE, 2004, 228 (1-4) : 410 - 417
[7] Sputtered Ru-Ti, Ru-N and Ru-Ti-N films as Cu diffusion barrier
Li, Ji
Lu, Hai-Sheng
Wang, Yong-Wei
Qu, Xin-Ping
[J]. MICROELECTRONIC ENGINEERING, 2011, 88 (05) : 635 - 640
[8] Ma SL, 2000, RARE METAL MAT ENG, V29, P276
[9] Manufacturability of the CMP process
Malik, F
Hasan, M
[J]. THIN SOLID FILMS, 1995, 270 (1-2) : 612 - 615
[10] Pemg D C, 2008, APPL SURF SCI, V254, P6059

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