Epitaxial growth and microstructure of cubic SiC films on Si substrates

被引：2

作者：

Jia, HJ ^{[1
]}

Yang, YT ^{[1
]}

Chai, CC ^{[1
]}

Li, YJ ^{[1
]}

Zhu, ZY ^{[1
]}

机构：

[1] Xidian Univ, Inst Microelect, Xian 710071, Peoples R China

来源：

OPTICAL MATERIALS | 2003年 / 23卷 / 1-2期

关键词：

3C-SiC thin films; APCVD; characterization;

D O I：

10.1016/S0925-3467(03)00058-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cubic SiC (3C-SiC) thin films have been heteroepitaxially grown on (100) Si substrates via atmospheric pressure chemical vapor deposition process with SiH4-C3H8-H-2 reaction system. Temperature dependence of microstructure and chemical composition of the films were investigated using X-ray diffraction spectrum, scanning electron microscopy and Auger electron spectroscopy. An optimum condition for the growth of SiC/Si films was determined. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：49 / 54

页数：6

共 12 条

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