Quasi-one-dimensional transport in the extreme quantum limit of heavily doped n-InSb

The longitudinal (rho (zz)) and transverse (rho (xx)) resistivities of heavily doped n-InSb have been studied systematically in the extreme quantum limit of applied magnetic field. The results are discussed in terms of the quasi-one-dimensional nature of the transport in the extreme quantum limit for the case of electron scattering by ionized impurities. The relation between transverse and longitudinal resistivity predicted for this case is verified experimentally both in magnetic-field and temperature-dependent data.