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Interface edge states and quantum Hall effect in graphene under a modulated magnetic field
被引:8
作者:
Xu, Lei
[1
,2
]
An, Jin
[1
,2
]
Gong, Chang-De
[1
,2
,3
,4
]
机构:
[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
[3] Zhejiang Normal Univ, Ctr Stat & Theoret Condensed Matter Phys, Jinhua 321004, Peoples R China
[4] Zhejiang Normal Univ, Dept Phys, Jinhua 321004, Peoples R China
来源:
PHYSICAL REVIEW B
|
2010年
/
82卷
/
15期
关键词:
MASSLESS DIRAC FERMIONS;
LANDAU-LEVELS;
BERRYS PHASE;
GRAPHITE;
GAS;
D O I:
10.1103/PhysRevB.82.155421
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Graphene properties can be manipulated by a periodic potential. Based on the tight-binding model, we study graphene under a one-dimensional modulated magnetic field which contains both a uniform and a staggered component. The chiral current-carrying edge states generated at the interfaces where the staggered component changes direction, lead to an unusual integer quantum Hall effect in graphene, which can be observed experimentally by a standard four-terminal Hall measurement. When Zeeman splitting is taken into account, an anomalous state is predicted where the electron edge currents with opposite spin polarization propagate in the opposite directions at one sample boundary, whereas propagate in the same directions at the other sample boundary. Furthermore, all the interface edge currents are fully spin polarized with the same spin direction, which is expected to have potential application in spintronic devices.
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页数:5
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